The IPN80R3K3P7ATMA1 is a CoolGaN™ IPS half-bridge from Infineon Technologies. This integrated power stage (IPS) solution combines GaN (Gallium Nitride) power transistors, drivers, and protection features in a single package. Designed for high-frequency, high-efficiency power conversion, it is ideal for applications such as server power supplies, telecom rectifiers, and USB-PD chargers.

Applications:

• Server Power Supplies
• Telecom Rectifiers
• USB-PD Chargers
• Adapter
• Wireless Charging

Features:

• CoolGaN™ Technology
• Integrated Half-Bridge
• High Frequency Operation
• High Efficiency
• Integrated Gate Driver
• Over-Current Protection
• Over-Temperature Protection

Benefits:

• High Efficiency: GaN technology enables higher efficiency compared to traditional silicon MOSFETs, reducing power losses and improving system performance.
• High Power Density: Integration of power transistors, drivers, and protection features in a single package allows for higher power density and smaller form factor.
• Fast Switching: GaN transistors offer faster switching speeds, enabling higher frequency operation and reduced switching losses.
• Improved Thermal Performance: Optimized thermal design enables efficient heat dissipation, improving reliability and extending product lifetime.
• Simplified Design: Integrated solution simplifies the design process and reduces the number of external components.

Additional Details:

The IPN80R3K3P7ATMA1 comes in an LGA package. The specific electrical characteristics, thermal performance, and application guidelines are detailed in the datasheet. It is RoHS compliant. This CoolGaN™ IPS half-bridge is well-suited for high-frequency, high-efficiency power conversion applications where size, efficiency, and performance are critical.