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Same model may have multiple batches, images only for reference.
IPP019N08NF2SAKMA1 Real Image
Same model may have multiple batches, images only for reference.

IPP019N08NF2SAKMA1

Part No IPP019N08NF2SAKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description TRENCH 40<-<100V / N-Channel 80 V 32A (Ta), 191A (Tc) 3.8W (Ta), 250W (Tc) Through Hole PG-TO220-3
Datasheet
IPP019N08NF2SAKMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series StrongIRFET™ 2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 191A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 194µA
Gate Charge (Qg) (Max) @ Vgs 186 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8700 pF @ 40 V
Power Dissipation (Max) 3.8W (Ta), 250W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP019N
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-IPP019N08NF2SAKMA1,SP005548842
Standard Package 50
Win Source Part Number 1065203-IPP019N08NF2SAKMA1
Ultra Librarian 3D Model Ultra Librarian IPP019N08NF2SAKMA1 CAD Model

Description

The IPP019N08NF2SAKMA1 is a high-performance MOSFET manufactured by Infineon Technologies.

  • Series: StrongIRFET™ 2
  • Supply and Demand Status: Balance
  • Power Dissipation: 3.8W
  • Breakdown Voltage: 80V
  • On-State Resistance: 1.9mOhm
  • Continuous Current @ 25°C: 32A
  • Gate Charge and Input Capacitance: Low
  • Ideal Choice for: high-frequency applications

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