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IPP040N08NF2SAKMA1

Part No IPP040N08NF2SAKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description TRENCH 40<-<100V / N-Channel 80 V 22A (Ta), 115A (Tc) 3.8W (Ta), 150W (Tc) Through Hole PG-TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 22A, 115A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.8V @ 85µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 40 V
Power Dissipation (Max) 3.8W, 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Through Hole
Supplier Device Package PG-TO220-3
Case / Package TO-220-3
Base Product Number IPP040N
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number SP005548845,448-IPP040N08NF2SAKMA1
Standard Package 50
Win Source Part Number 1324439-IPP040N08NF2SAKMA1
Ultra Librarian 3D Model Ultra Librarian IPP040N08NF2SAKMA1 CAD Model

Description

The Infineon IPP040N08NF2SAKMA1 is an N-channel MOSFET transistor designed for use in a range of applications, including power supplies, motor control, and lighting.

  • Drain to Source Voltage: 80V
  • Continuous Drain Current: 22A @ 25°C
  • Maximum On-Resistance: 4mOhm @ 80A
  • Gate Charge: 81nC @ 10V
  • RoHS3 Compliant: Yes
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6550 $57.9250
90+ $1.3580 $122.2200
135+ $1.3155 $177.5925
185+ $1.2732 $235.5420
235+ $1.2307 $289.2145
315+ $1.1034 $347.5710
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,323 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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