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Same model may have multiple batches, images only for reference.
IPS65R1K4C6 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPS65R1K4C6

Part No IPS65R1K4C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 3.2A TO-251
Datasheet
IPS65R1K4C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 100μA
Max Gate Charge 10.5nC @ 10V
Max Input Capacitance 225pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 28W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 040653-IPS65R1K4C6
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPS65R1K4C6 CAD Model

Description

The Infineon Technologies 040653-IPS65R1K4C6 is an N-channel MOSFET with a drain-source breakdown voltage of 650V and a maximum continuous drain current of 3.2A @ 25°C.

  • Power Dissipation: 28W (Tc)
  • Maximum Rds On: 1.4 Ohm @ 1A and 10V
  • Gate-Source Threshold Voltage: 3.5V @ 100μA
  • Maximum Gate Charge: 10.5nC @ 10V
  • Maximum Input Capacitance: 225pF @ 100V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO251-3
  • Mounting: Through hole
  • Supply and Demand Status: Limited

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