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IRF1407STRLPBF real image236 IRF1407STRLPBF real image237
Same model may have multiple batches, images only for reference.
IRF1407STRLPBF real image236 IRF1407STRLPBF real image237
IRF1407STRLPBF real image236 IRF1407STRLPBF real image237
Same model may have multiple batches, images only for reference.

IRF1407STRLPBF

Part No IRF1407STRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 100A D2PAK
Datasheet
IRF1407STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 250nC @ 10V
Max Input Capacitance 5600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 7.8 mOhm @ 78A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 015749-IRF1407STRLPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IRF1407
Introduction Date June 30, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRF1407STRLPBF CAD Model

Description

The Infineon Technologies IRF1407STRLPBF is an N-channel MOSFET designed for use in various electronic devices such as power supplies and motor control circuits.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 100A (Tc) @ 25°C
  • Package: D2PAK package
  • Temperature Range: -55°C to 175°C (TJ)
  • Suitable for: use in high-power applications

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