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Same model may have multiple batches, images only for reference.
IRF2204PBF
Same model may have multiple batches, images only for reference.

IRF2204PBF

Part No IRF2204PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 210A TO-220AB
Datasheet
IRF2204PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 200nC @ 10V
Max Input Capacitance 5890pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 3.6 mOhm @ 130A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 040675-IRF2204PBF
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRF2204PBF CAD Model

Description

The supply and demand status of this product is limited.

  • Type: N-Channel polarity MOSFET technology-based component
  • Maximum Power Dissipation: 330W (Tc)
  • Package: TO-220AB case
  • Drain-Source Breakdown Voltage: 40V
  • Maximum Rds On: 3.6 mOhm @ 130A, 10V
  • Use: power management

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Pricing & Ordering

Quantity Unit Price Ext. Price
31+ $1.6259 $50.4029
66+ $1.5210 $100.3860
103+ $1.4685 $151.2555
147+ $1.3636 $200.4492
191+ $1.3112 $250.4392
239+ $1.2587 $300.8293
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Availability: 8,500 pieces
MOQ: 31 pcs
Order Increment : 1 pcs
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