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Same model may have multiple batches, images only for reference.
IRF3707S Real Image
Same model may have multiple batches, images only for reference.

IRF3707S

Part No IRF3707S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 62A D2PAK
Datasheet
IRF3707S Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 19nC @ 4.5V
Max Input Capacitance 1990pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 87W (Tc)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046459-IRF3707S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF3707S CAD Model

Description

The IRF3707S is an N-channel MOSFET from Infineon Technologies.

  • Power Dissipation: 87W (Tc)
  • Breakdown Voltage: 30V
  • Continuous Drain Current: 62A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 19nC @ 4.5V
  • Maximum Input Capacitance: 1990pF @ 15V
  • Application: Discrete Semiconductor Products
  • Drive Voltage: 4.5V
  • Maximum Rds On: 12.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Package: D2PAK
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supply and Demand: Sufficient

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