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Same model may have multiple batches, images only for reference.
IRF3711STRR
Same model may have multiple batches, images only for reference.

IRF3711STRR

Part No IRF3711STRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 110A D2PAK / Trans MOSFET N-CH 20V 110A 3-Pin(2+Tab) D2PAK T/R
Datasheet
IRF3711STRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 44nC @ 4.5V
Max Input Capacitance 2980pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 104064-IRF3711STRR
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF3711
Introduction Date November 15, 2001
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF3711STRR CAD Model

Description

The Infineon Technologies IRF3711STRR is a N-Channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 110A at 25°C.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 110A @ 25°C
  • Maximum Rds On: 6 mOhm @ 15A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 44nC @ 4.5V
  • Maximum Input Capacitance: 2980pF @ 10V
  • Power Dissipation: 3.1W (Ta) and 120W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)

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