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Same model may have multiple batches, images only for reference.
IRF3808PBF real image245
Same model may have multiple batches, images only for reference.

IRF3808PBF

Part No IRF3808PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 140A TO-220AB
Datasheet
IRF3808PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 220nC @ 10V
Max Input Capacitance 5310pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 82A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017428-IRF3808PBF
Family Name IRF3808
Introduction Date February 02, 2004
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF3808PBF CAD Model

Description

The Infineon Technologies IRF3808PBF is an N-channel MOSFET transistor suitable for use in high power applications.

  • Drain-Source Breakdown Voltage: 75V
  • Maximum Continuous Drain Current @ 25°C: 140A @ 25°C
  • On-Resistance: 7 mOhm @ 82A and 10V
  • Gate Charge: 220nC @ 10V
  • Input Capacitance: 5310pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3652 $54.6080
90+ $1.1202 $100.8180
140+ $1.0852 $151.9280
195+ $1.0502 $204.7890
250+ $1.0152 $253.8000
330+ $0.9102 $300.3660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,970 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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