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IRF5210LPBF

Name: IRF5210LPBF
Brand: Infineon Technologies
SKU: 159556
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF5210LPBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 100V 38A TO-262
Datasheet	IRF5210LPBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Active
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	100V
Continuous Drain Current at 25°C	38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	230nC @ 10V
Max Input Capacitance	2780pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	3.1W (Ta), 170W (Tc)
Maximum Rds On at Id,Vgs	60 mOhm @ 38A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	TO-262
Dimension	TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number	136537-IRF5210LPBF
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRF5210LPBF CAD Model

Alternative Products

Description

The Infineon Technologies IRF5210LPBF is a medium popularity P-channel MOSFET transistor that comes in a TO-262 package.

Power Dissipation: 3.1W (Ta), 170W (Tc)
Continuous Drain Current: up to 38A (Tc) @ 25°C
Suitable for: various electronic applications that require a P-channel MOSFET transistor

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