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IRF5802

Part No IRF5802
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=150V, Id=0.9A) | MOSFET N-CH 150V 900MA 6TSOP
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 150V
Id - Continuous Drain Current 900mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 540mA, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 6.8nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 88pF at 25V
Power Dissipation (Maximum) 2W
Mounting Style SMD
Supplier Device Package Micro6(TSOP-6)
Manufacturer Package SOT-23-6 Thin, TSOT-23-6
Manufacturer Pack Quantity 100
MSL Level 1 (Unlimited)
Win Source Part Number 1187066-IRF5802
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF5802 CAD Model

Description

The Infineon Technologies IRF5802 is an N-Channel MOSFET transistor manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage (Maximum): 150V
  • Continuous Drain Current: 900mA
  • Rds On (Maximum) @ Id, Vgs: 1.2Ohm @ 540mA, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 6.8nC @ 10V
  • Packaging Style: Micro6(TSOP-6)
  • Operating Temperature: -55°C to 175°C
  • Input Capacitance (Ciss) (Maximum) @ Vds: 88pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
295+ $0.1989 $58.6755
625+ $0.1861 $116.3125
965+ $0.1797 $173.4105
1,385+ $0.1669 $231.1565
1,800+ $0.1605 $288.9000
2,250+ $0.1541 $346.7250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,022 pieces
MOQ: 295 pcs
Order Increment : 1 pcs
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