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Same model may have multiple batches, images only for reference.
IRF6717MTR1PBF
Same model may have multiple batches, images only for reference.

IRF6717MTR1PBF

Part No IRF6717MTR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 38A DIRECTFET
Datasheet
IRF6717MTR1PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 38A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 150μA
Max Gate Charge 69nC @ 4.5V
Max Input Capacitance 6750pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 96W (Tc)
Maximum Rds On at Id,Vgs 1.25 mOhm @ 38A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 116111-IRF6717MTR1PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6717MTR1PBF CAD Model

Description

It has a balanced supply and demand status.

  • Maximum Power Dissipation: 2.8W (Ta), 96W (Tc)
  • Continuous Drain Current: 38A (Ta), 200A (Tc)
  • Drain-Source Breakdown Voltage: 25V
  • Maximum Rds On at Id,Vgs: 1.25 mOhm @ 38A, 10V
  • Product Status: obsolete (EOL)
  • Temperature Range: -40°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5454 $51.8130
225+ $0.4476 $100.7100
350+ $0.4336 $151.7600
480+ $0.4196 $201.4080
620+ $0.4056 $251.4720
830+ $0.3636 $301.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 46,280 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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