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Same model may have multiple batches, images only for reference.
IRF7204PBF
Same model may have multiple batches, images only for reference.

IRF7204PBF

Part No IRF7204PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.3A 8-SOIC
Datasheet
IRF7204PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 860pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 5.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 114083-IRF7204PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7204PBF CAD Model

Description

The Infineon Technologies IRF7204PBF is a P-Channel MOSFET transistor with an 8-SO case/package.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 5.3A (Ta)
  • Max Rds On at Id,Vgs: 60 mOhm @ 5.3A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Max Gate Charge: 25nC @ 10V
  • Max Input Capacitance: 860pF @ 10V
  • Power Dissipation (Max): 2.5W (Tc)
  • Category: Discrete Semiconductor Products
  • Status: Not For New Designs
  • Supply and Demand Status: Balanced

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85+ $1.1765 $100.0025
135+ $1.1397 $153.8595
185+ $1.1030 $204.0550
235+ $1.0662 $250.5570
315+ $0.9559 $301.1085
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