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IRF7307TRPBF

Part No IRF7307TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.2A, 4.3A
Maximum Rds On at Id,Vgs 50 mOhm @ 2.6A, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 20nC @ 4.5V
Max Input Capacitance 660pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 109378-IRF7307TRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7307TRPBF CAD Model

Description

The Infineon Technologies IRF7307TRPBF is an N and P-Channel MOSFET transistor that features a logic level gate.

  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 5.2A, 4.3A
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 20nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 50 mOhm @ 2.6A, 4.5V
  • Widely Used: Discrete Semiconductor Products
  • Status: active part
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.6044 $57.6264
13+ $7.8806 $102.4478
20+ $7.6343 $152.6860
28+ $7.3880 $206.8640
36+ $7.1418 $257.1048
47+ $6.4030 $300.9410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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