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IRF7834PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7834PBF

Part No IRF7834PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 19A 8SO / N-Channel 30 V 19A (Ta) 2.5W (Ta) Surface Mount 8-SO
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta)
Rds On (Max) @ Id, Vgs 4.5mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3710 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 875054-IRF7834PBF
Ultra Librarian 3D Model Ultra Librarian IRF7834PBF CAD Model

Description

The IRF7834PBF is a single N-channel MOSFET transistor from Infineon Technologies. It is designed for use in discrete semiconductor products and is part of the IRF7834 series.

  • Drain-to-Source Voltage: 30V
  • Continuous Drain Current: 19A @ 25°C
  • Maximum On-Resistance: 4.5mOhm @ a current of 19A
  • Gate-Source Threshold Voltage: 2.25V
  • Power Dissipation: 2.5W
  • Temperature Range: -55°C to 150°C
  • Mounting: Surface mount
  • Package: 8-SOIC package

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Quantity Unit Price Ext. Price
35+ $1.6298 $57.0430
85+ $1.3374 $113.6790
130+ $1.2955 $168.4150
180+ $1.2537 $225.6660
235+ $1.2120 $284.8200
310+ $1.0866 $336.8460
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Availability: 1,362 pieces
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