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IRF9393TRPBF

Part No IRF9393TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9.2A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V, 20V
Gate-Source Threshold Voltage 2.4V @ 25μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1110pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 13.3 mOhm @ 9.2A, 20V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 112494-IRF9393TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9393TRPBF CAD Model

Description

The Infineon Technologies IRF9393TRPBF is a highly efficient and reliable MOSFET that is designed to deliver exceptional performance.

  • Supply and Demand: Balanced
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 9.2A @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4752 $52.2720
225+ $0.4452 $100.1700
350+ $0.4301 $150.5350
500+ $0.4000 $200.0000
650+ $0.3850 $250.2500
815+ $0.3700 $301.5500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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