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IRF9Z24NPBF Real Image IRF9Z24NPBF real image316
Same model may have multiple batches, images only for reference.
IRF9Z24NPBF Real Image IRF9Z24NPBF real image316
IRF9Z24NPBF Real Image IRF9Z24NPBF real image316
Same model may have multiple batches, images only for reference.

IRF9Z24NPBF

Part No IRF9Z24NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 12A TO-220AB
Datasheet
IRF9Z24NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 175 mOhm @ 7.2A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017567-IRF9Z24NPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF9Z24NPBF CAD Model

Description

The Infineon Technologies 017567-IRF9Z24NPBF is a P-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current at 25°C: 12A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 19nC @ 10V
  • Maximum Input Capacitance: 350pF @ 25V
  • Maximum Rds On at Id,Vgs: 175 mOhm @ 7.2A, 10V
  • Product Status: active
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-220AB
  • Popularity Rating: high

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