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IRFH7914TR2PBF

Part No IRFH7914TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 15A PQFN56
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 15A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 12nC @ 4.5V
Max Input Capacitance 1160pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta)
Maximum Rds On at Id,Vgs 8.7 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerVDFN
Win Source Part Number 135582-IRFH7914TR2PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFH7914TR2PBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel polarity power transistor designed for discrete semiconductor products.

  • Transistor Polarity: N-Channel
  • Maximum Power Dissipation: 3.1W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 15A (Ta), 35A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Maximum Gate Charge: 12nC @ 4.5V
  • Maximum Input Capacitance: 1160pF @ 15V
  • Maximum Rds On @ Id,Vgs: 8.7 mOhm @ 14A, 10V
  • Package: PQFN (5x6)
  • Dimension: 8-PowerVDFN
  • Mounting: SMD (SMT)
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5082 $60.3280
95+ $1.2376 $117.5720
145+ $1.1989 $173.8405
200+ $1.1602 $232.0400
260+ $1.1215 $291.5900
345+ $1.0055 $346.8975
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,500 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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