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Same model may have multiple batches, images only for reference.
IRFHE4250DTRPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFHE4250DTRPBF

Part No IRFHE4250DTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 86A/303A PQFN
Datasheet
IRFHE4250DTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 86A, 303A
Maximum Rds On at Id,Vgs 2.75 mOhm @ 27A, 10V
Gate-Source Threshold Voltage 2.1V @ 35μA
Max Gate Charge 20nC @ 4.5V
Max Input Capacitance 1735pF @ 13V
Maximum Power Dissipation 156W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 32-PQFN (6x6)
Win Source Part Number 1046903-IRFHE4250DTRPBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian IRFHE4250DTRPBF CAD Model

Description

The Infineon Technologies 1046903-IRFHE4250DTRPBF is a Dual N-Channel MOSFET with a Logic Level Gate.

  • Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 156W
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 86A @ 25°C and 303A
  • Gate-Source Threshold Voltage: 2.1V @ 35μA
  • Maximum Gate Charge: 20nC @ 4.5V
  • Maximum Input Capacitance: 1735pF @ 13V
  • Maximum Rds On @ Id,Vgs: 2.75 mOhm @ 27A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.6306 $61.9366
25+ $4.6200 $115.5000
39+ $4.4756 $174.5484
54+ $4.3313 $233.8902
69+ $4.1869 $288.8961
93+ $3.7538 $349.1034
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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