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TSM900N06CH

Part No TSM900N06CH
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 60V, 11A, SINGLE N-CHANNEL POWER / N-Channel 60 V 11A (Tc) 25W (Tc) Through Hole TO-251S (I-PAK SL)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Taiwan Semiconductor
Series -
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 15 V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251S (I-PAK SL)
Package / Case TO-251-3 Stub Leads, IPak
Base Product Number TSM900
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 15,000 pcs
Win Source Part Number 1383761-TSM900N06CH
Ultra Librarian 3D Model Ultra Librarian TSM900N06CH CAD Model

Description

The TSM900N06CH is an N-Channel MOSFET transistor from Taiwan Semiconductor.

  • Category: Single FETs, MOSFETs
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 11A @ 25°C
  • Maximum On-Resistance (Rds On): 90mOhm @ 6A and 10V gate-source voltage (Vgs)
  • Gate-Source Threshold Voltage (Vgs(th)): 2.5V @ 250μA
  • Maximum Power Dissipation: 25W
  • Mounting Type: Through-hole
  • Package: TO-251-3 Stub Leads, IPak
  • Gate Charge (Qg): 9.3nC @ 10V
  • Input Capacitance (Ciss): 500pF @ 15V
  • Operating Temperature Range: 150°C
  • REACH Regulation: Unaffected
  • Standard Package: 15,000 pcs

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