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Same model may have multiple batches, images only for reference.
IRFHS9351TR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRFHS9351TR2PBF

Part No IRFHS9351TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 2.3A PQFN
Datasheet
IRFHS9351TR2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.3A
Maximum Rds On at Id,Vgs 170 mOhm @ 3.1A, 10V
Gate-Source Threshold Voltage 2.4V @ 10μA
Max Gate Charge 3.7nC @ 10V
Max Input Capacitance 160pF @ 25V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-PQFN (2x2)
Win Source Part Number 1046921-IRFHS9351TR2PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFHS9351TR2PBF CAD Model

Description

The Infineon Technologies 452233 is a 2 P-Channel (Dual) FET with a Logic Level Gate, which is categorized under Discrete Semiconductor Products.

  • Manufacturer: Infineon Technologies
  • Type: 2 P-Channel (Dual) FET with Logic Level Gate
  • Category: Discrete Semiconductor Products
  • Mounting: SMD (SMT)
  • Case/Package: 6-PQFN (2x2)
  • Status: Obsolete
  • Operating Temperature: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 1.4W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 2.3A @ 25°C
  • Gate-Source Threshold Voltage: 2.4V @ 10μA
  • Maximum Gate Charge: 3.7nC @ 10V
  • Maximum Input Capacitance: 160pF @ 25V
  • Maximum Rds On @ Id,Vgs: 170 mOhm @ 3.1A, 10V
  • Supply and Demand Status: Balanced

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