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Same model may have multiple batches, images only for reference.
IRFI4229PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFI4229PBF

Part No IRFI4229PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 19A TO-220FP
Datasheet
IRFI4229PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4480pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 46W (Tc)
Maximum Rds On at Id,Vgs 46 mOhm @ 11A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 090824-IRFI4229PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFI4229PBF CAD Model

Description

The Infineon Technologies IRFI4229PBF is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 250V and a continuous drain current of 19A @ 25°C.

  • Power Dissipation: 46W (Tc)
  • Package: TO-220AB
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On at Id,Vgs: 46 mOhm @ 11A, 10V
  • Drive Voltage Required: maximum of 10V
  • Applications: widely used in applications where low on-state resistance, high switching speed, and ease of use are required. It is a popular choice for use in power supplies, motor control, and lighting applications.
  • Production Status: currently in active production

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