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IRFIZ24EPBF

Part No IRFIZ24EPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 14A TO220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 370pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 29W (Tc)
Maximum Rds On at Id,Vgs 71 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 069492-IRFIZ24EPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRFIZ24EPBF CAD Model

Description

The IRFIZ24EPBF is a MOSFET transistor manufactured by Infineon Technologies.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 14A @ 25°C
  • Temperature Range: -55°C to 175°C
  • Package: TO-220AB full-pak
  • Maximum Rds On: 71 mOhm @ 7.8A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $32.9625 $65.9250
5+ $27.0466 $135.2330
7+ $26.2012 $183.4084
10+ $25.3569 $253.5690
12+ $24.5114 $294.1368
16+ $21.9750 $351.6000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,400 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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