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IRFP4332-203PBF

Part No IRFP4332-203PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 57A TO247AC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 5860pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 360W (Tc)
Maximum Rds On at Id,Vgs 33 mOhm @ 35A, 10V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 069510-IRFP4332-203PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFP4332-203PBF CAD Model

Description

The Infineon Technologies MOSFET, part number IRFP4332-203PBF, is a N-Channel through-hole electronic component.

  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 57A (Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On at Id,Vgs: 33 mOhm @ 35A, 10V
  • Package: TO-247AC
  • Status: Obsolete(EOL) with balanced supply and demand status
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Temperature Range: -40°C to 175°C (TJ)
  • Power Dissipation: 360W (Tc)

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