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Same model may have multiple batches, images only for reference.
IRFR13N15DPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFR13N15DPBF

Part No IRFR13N15DPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 14A DPAK
Datasheet
IRFR13N15DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 620pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 86W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 8.3A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 001275-IRFR13N15DPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR13N15DPBF CAD Model

Description

The Infineon Technologies IRFR13N15DPBF is a N-Channel MOSFET manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 14A @ 25°C
  • Power Dissipation: 86W (Tc)
  • Package: D-Pak
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Rds On @ Id,Vgs: 180 mOhm @ 8.3A, 10V

This MOSFET is ideal for use in Discrete Semiconductor Products and has a medium popularity in the market.

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