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Same model may have multiple batches, images only for reference.
IRFR2605 Real Image
Same model may have multiple batches, images only for reference.

IRFR2605

Part No IRFR2605
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 19A D-PAK
Datasheet
IRFR2605 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 420pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 11A, 10V
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047034-IRFR2605
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR2605 CAD Model

Description

The Infineon Technologies MOSFET is a high-performance electronic component designed for use in a wide range of applications.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 19A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 23nC @ 10V
  • Max Input Capacitance: 420pF @ 25V
  • Maximum Rds On: 85 mOhm @ 11A, 10V
  • Package: D-Pak
  • Mounting: SMD (SMT)
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balance

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