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IRFR5305TRLPBF Infineon Technologies IRFR5305TRLPBF Real Image IRFR5305TRLPBF real image 2 IRFR5305TRLPBF label picture
Same model may have multiple batches, images only for reference.
IRFR5305TRLPBF Infineon Technologies IRFR5305TRLPBF Real Image IRFR5305TRLPBF real image 2 IRFR5305TRLPBF label picture
IRFR5305TRLPBF Infineon Technologies IRFR5305TRLPBF Real Image IRFR5305TRLPBF real image 2 IRFR5305TRLPBF label picture
Same model may have multiple batches, images only for reference.

IRFR5305TRLPBF

Part No IRFR5305TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 31A DPAK
Datasheet
IRFR5305TRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 65 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 120424-IRFR5305TRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR5305TRLPBF CAD Model

Description

The IRFR5305TRLPBF is a P-Channel MOSFET manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 31A @ 25°C
  • Power Dissipation: 110W (Tc)
  • Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On at Id,Vgs: 65 mOhm @ 16A, 10V
  • Discrete Semiconductor Products: Yes
  • Market Popularity: Medium

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1,410+ $0.2128 $300.0480
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