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IRFR9024N

Part No IRFR9024N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 11A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 175 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 093685-IRFR9024N
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR9024N CAD Model

Description

The Infineon Technologies IRFR9024N is a P-channel MOSFET that is part of the Discrete Semiconductor Products category.

  • Power Dissipation (Max): 38W (Tc)
  • Package: D-Pak
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 11A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 19nC @ 10V
  • Max Input Capacitance: 350pF @ 25V
  • Max Rds On @ Id,Vgs: 175 mOhm @ 6.6A, 10V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
325+ $0.1557 $50.6025
690+ $0.1458 $100.6020
1,065+ $0.1409 $150.0585
1,530+ $0.1311 $200.5830
1,985+ $0.1261 $250.3085
2,480+ $0.1212 $300.5760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 325 pcs
Order Increment : 1 pcs
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