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Same model may have multiple batches, images only for reference.
IRFS17N20D Real Image
Same model may have multiple batches, images only for reference.

IRFS17N20D

Part No IRFS17N20D
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 16A D2PAK
Datasheet
IRFS17N20D Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 1100pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.8W (Ta), 140W (Tc)
Maximum Rds On at Id,Vgs 170 mOhm @ 9.8A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 102239-IRFS17N20D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS17N20D CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power transistor with a maximum power dissipation of 3.8W and 140W at Ta and Tc, respectively, and a drain-source breakdown voltage of 200V.

  • Power Dissipation: 3.8W @ Ta, 140W @ Tc
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 16A @ 25°C
  • Maximum Rds On: 170 mOhm @ 9.8A and 10V
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 50nC @ 10V
  • Maximum Input Capacitance: 1100pF @ 25V
  • Package: D2PAK package

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255+ $0.4574 $116.6370
395+ $0.4435 $175.1825
540+ $0.4297 $232.0380
700+ $0.4146 $290.2200
935+ $0.3719 $347.7265
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