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IRFZ24NSTRLPBF

Part No IRFZ24NSTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 17A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 370pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017727-IRFZ24NSTRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFZ24NSTRLPBF CAD Model

Description

The Infineon Technologies IRFZ24NSTRLPBF MOSFET is a high-performance N-channel power MOSFET designed for use in a wide range of applications, including discrete semiconductor products. The device is packaged in a D2PAK case, which is ideal for SMD (SMT) mounting.

  • Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 17A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id,Vgs: 70 mOhm @ 10A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 370pF @ 25V
  • Popularity: medium
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3881 $58.2150
365+ $0.3188 $116.3620
565+ $0.3084 $174.2460
775+ $0.2991 $231.8025
1,000+ $0.2888 $288.8000
1,340+ $0.2587 $346.6580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,130 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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