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Same model may have multiple batches, images only for reference.
IRL3103D1SPBF Real Image
Same model may have multiple batches, images only for reference.

IRL3103D1SPBF

Part No IRL3103D1SPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 64A D2PAK-5
Datasheet
IRL3103D1SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 43nC @ 4.5V
Max Input Capacitance 1900pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.1W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 34A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047443-IRL3103D1SPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3103D1SPBF CAD Model

Description

The Infineon Technologies IRL3103D1SPBF is a MOSFET transistor designed for use in discrete semiconductor products.

  • Power Dissipation: 3.1W (Ta) or 89W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 64A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 43nC @ 4.5V
  • Maximum Input Capacitance: 1900pF @ 25V
  • Maximum Rds On: 14 mOhm @ 34A, 10V
  • Case/Package: D2PAK
  • Operating Temperature: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balanced

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