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IRLR120NPBF

Part No IRLR120NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 10A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 440pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 48W (Tc)
Maximum Rds On at Id,Vgs 185 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047583-IRLR120NPBF
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Alternative Energy, Industrial
Ultra Librarian 3D Model Ultra Librarian IRLR120NPBF CAD Model

Description

The Infineon Technologies 1047583-IRLR120NPBF is an N-channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 48W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (25°C): 10A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Rds On (Id, Vgs): 185 mOhm @ 6A, 10V
  • Mounting Type: SMD (SMT)
  • Case/Package: D-Pak
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Input Capacitance: 440pF @ 25V
  • Lifecycle Status: Not for new designs
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
285+ $0.1769 $50.4165
605+ $0.1657 $100.2485
940+ $0.1601 $150.4940
1,345+ $0.1489 $200.2705
1,745+ $0.1433 $250.0585
2,180+ $0.1377 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 122,340 pieces
MOQ: 285 pcs
Order Increment : 1 pcs
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