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Same model may have multiple batches, images only for reference.
IRLR2703PBF Real Image
Same model may have multiple batches, images only for reference.

IRLR2703PBF

Part No IRLR2703PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 23A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 450pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 083831-IRLR2703PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLR2703PBF CAD Model

Description

The Infineon Technologies IRLR2703PBF is a MOSFET transistor designed for use in discrete semiconductor products.

  • Polarity: N-channel
  • Maximum Power Dissipation: 45W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 23A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Rds On at Id,Vgs: 45 mOhm @ 14A, 10V
  • Package: D-Pak packaging
  • Mounting: SMD (SMT) mounting

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