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Same model may have multiple batches, images only for reference.
IRLR7833TRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR7833TRRPBF

Part No IRLR7833TRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 140A DPAK
Datasheet
IRLR7833TRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 50nC @ 4.5V
Max Input Capacitance 4010pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047630-IRLR7833TRRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLR7833TRRPBF CAD Model

Description

The Infineon Technologies IRLR7833TRRPBF is an N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 140A (Tc).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 140A (Tc)
  • Maximum Power Dissipation: 140W (Tc)
  • Package: D-Pak (TO-252-3, DPak (2 Leads + Tab), SC-63)
  • Gate-Source Threshold Voltage: 2.3V @ 250μA
  • Maximum Gate Charge: 50nC @ 4.5V
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Balance

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