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IRLR8729PBF

Name: IRLR8729PBF
Brand: Infineon Technologies
SKU: 161646
Availability: InStock
Rating: 4.85 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IRLR8729PBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 58A D-PAK
Datasheet	IRLR8729PBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2.35V @ 25μA
Max Gate Charge	16nC @ 4.5V
Max Input Capacitance	1350pF @ 15V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	55W (Tc)
Maximum Rds On at Id,Vgs	8.9 mOhm @ 25A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	D-Pak
Dimension	TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number	069760-IRLR8729PBF
Popularity	Medium
Supply and Demand Status	Balance
Application Field	Used in Power Management, Computers & Computer Peripherals, Motor Drive & Control, LED Lighting
Ultra Librarian 3D Model	Ultra Librarian IRLR8729PBF CAD Model

Alternative Products

Description

The Infineon Technologies IRLR8729PBF is a MOSFET transistor with N-Channel polarity.

Maximum Power Dissipation: 55W (Tc)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current: 58A (Tc) @ 25°C
Maximum Gate-Source Voltage: ±20V
Maximum Rds On: 8.9 mOhm @ 25A, 10V
Mounting: SMD (SMT) technology
Package: D-Pak case
Gate-Source Threshold Voltage: 2.35V @ 25μA
Maximum Gate Charge: 16nC @ 4.5V

This transistor is commonly used in power management, computer and computer peripheral, motor drive and control, and LED lighting applications.

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