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Same model may have multiple batches, images only for reference.
IRLZ44ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRLZ44ZPBF

Part No IRLZ44ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 51A TO-220AB
Datasheet
IRLZ44ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 36nC @ 5V
Max Input Capacitance 1620pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 31A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1047715-IRLZ44ZPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLZ44ZPBF CAD Model

Description

The Infineon Technologies IRLZ44ZPBF is an N-channel MOSFET that is packaged in a TO-220AB.

  • Manufacturer: Infineon Technologies
  • Product Name: IRLZ44ZPBF
  • Channel Type: N-channel
  • Package: TO-220AB
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 51A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 36nC @ 5V
  • Maximum Input Capacitance: 1620pF @ 25V
  • Maximum Rds On @ Id,Vgs: 13.5 mOhm @ 31A, 10V
  • Maximum Power Dissipation: 80W (Tc)
  • Supply and Demand Status: balanced

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