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ISP25DP06NMXTSA1

Part No ISP25DP06NMXTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 1.9A SOT223-4 / P-Channel 60 V 1.9A (Ta) 1.8W (Ta), 4.2W (Tc) Surface Mount PG-SOT223-4
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 10.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 30 V
Power Dissipation (Max) 1.8W (Ta), 4.2W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
Base Product Number ISP25DP06
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP004987272
Standard Package 1,000
Win Source Part Number 961051-ISP25DP06NMXTSA1
Ultra Librarian 3D Model Ultra Librarian ISP25DP06NMXTSA1 CAD Model

Description

The Infineon Technologies 961051-ISP25DP06NMXTSA1 is a P-channel MOSFET transistor.

  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 1.9A @ 25°C
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
  • Package: TO-261-4, TO-261AA
  • Power Dissipation: 1.8W (Ta), 4.2W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4016 $58.2320
355+ $0.3296 $117.0080
545+ $0.3192 $173.9640
750+ $0.3090 $231.7500
970+ $0.2987 $289.7390
1,295+ $0.2677 $346.6715
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,970 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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