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SPD22N08S2L-50

Name: SPD22N08S2L-50
Brand: Infineon Technologies
SKU: 518336
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	SPD22N08S2L-50
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 75V 25A DPAK
Datasheet	SPD22N08S2L-50 Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	75V
Continuous Drain Current at 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2V @ 31μA
Max Gate Charge	33nC @ 10V
Max Input Capacitance	850pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	75W (Tc)
Maximum Rds On at Id,Vgs	50 mOhm @ 11A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	P-TO252-3
Dimension	TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number	1101547-SPD22N08S2L-50
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian SPD22N08S2L-50 CAD Model

Alternative Products

Description

The Infineon SPD22N08S2L-50 is an N-Channel MOSFET designed for use in discrete semiconductor products.

Drain-Source Breakdown Voltage: 75V
Continuous Drain Current: 25A @ 25°C
Maximum Rds On: 50 mOhm @ 11A, 10V
Gate-Source Threshold Voltage: 2V @ 31μA
Maximum Gate Charge: 33nC @ 10V
Maximum Input Capacitance: 850pF @ 25V
Package: P-TO252-3
Case Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation: 75W (Tc)
Temperature Range: -55°C to 175°C (TJ)

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