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Same model may have multiple batches, images only for reference.
SPD50N06S2L-13 Real Image
Same model may have multiple batches, images only for reference.

SPD50N06S2L-13

Part No SPD50N06S2L-13
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 50A DPAK
Datasheet
SPD50N06S2L-13 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 80μA
Max Gate Charge 69nC @ 10V
Max Input Capacitance 2300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 12.7 mOhm @ 34A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package P-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 065931-SPD50N06S2L-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD50N06S2L-13 CAD Model

Description

The Infineon Technologies SPD50N06S2L-13 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-source breakdown voltage: 55V
  • Continuous drain current: 50A @ 25°C
  • Package: P-TO252-3
  • Mounting Type: SMD (SMT) technology
  • Maximum Rds On: 12.7 mOhm @ 34A, 10V
  • Gate-source threshold voltage: 2V @ 80μA
  • Maximum gate charge: 69nC @ 10V
  • Maximum input capacitance: 2300pF @ 25V
  • Maximum gate-source voltage: ±20V
  • Supply and demand status: balanced

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