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Same model may have multiple batches, images only for reference.
SPI80N06S-08 Real Image
Same model may have multiple batches, images only for reference.

SPI80N06S-08

Part No SPI80N06S-08
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPI80N06S-08 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series SIPMOS®
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 187 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3660 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number SPI80N
Other Names SP000054055,SPI80N06S08,SP000084809
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278267-SPI80N06S-08
Ultra Librarian 3D Model Ultra Librarian SPI80N06S-08 CAD Model

Description

The Infineon Technologies SPI80N06S-08 is a N-channel MOSFET type product.

  • Standard Package: 500
  • Technology: MOSFET (Metal Oxide)
  • Maximum Drain to Source Voltage: 55V
  • Continuous Drain Current: 80A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 4V @ 240μA
  • Power Dissipation (max): 300W (Tc)
  • Package/Case: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package: PG-TO262-3-1
  • Operating Temperature Range: -55°C to 175°C (TJ)

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