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Same model may have multiple batches, images only for reference.
SPP10N10L Real Image
Same model may have multiple batches, images only for reference.

SPP10N10L

Part No SPP10N10L
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 10.3A TO-220
Datasheet
SPP10N10L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 21μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 444pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 154 mOhm @ 8.1A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1101621-SPP10N10L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP10N10L CAD Model

Description

The SPP10N10L is an N-channel MOSFET transistor manufactured by Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Continuous Drain Current @ 25°C: 10.3A
  • Gate-Source Threshold Voltage: 2V @ 21μA
  • Max Gate Charge: 22nC @ 10V
  • Technology: MOSFET
  • Mounting Type: Through Hole
  • Package/Case: PG-TO220-3-1
  • Category: Discrete Semiconductor Products

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