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SPW20N60C3FKSA1

Part No SPW20N60C3FKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 20.7A TO247-3 / N-Channel 650 V 20.7A (Tc) 208W (Tc) Through Hole PG-TO247-3-1
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-1
Package / Case TO-247-3
Base Product Number SPW20N60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SPW20N60C3IN-NDR,SPW20N60C3XK,SPW20N60C3IN-ND,SP000013729,SPW20N60C3,SPW20N60C3IN
Standard Package 30
Win Source Part Number 1002280-SPW20N60C3FKSA1
Ultra Librarian 3D Model Ultra Librarian SPW20N60C3FKSA1 CAD Model

Description

The SPW20N60C3FKSA1 is a CoolMOS™ N-channel MOSFET type electronic component manufactured by Infineon Technologies.

  • Drain to Source Voltage: 650 V
  • Continuous Drain Current: 20.7A (Tc)
  • Maximum Rds On: 190mOhm @ 13.1A, 10V
  • Maximum Vgs(th): 3.9V @ 1mA
  • Mounting Type: Through-Hole
  • Package/Case: TO-247-3
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5093 $52.8255
75+ $1.4138 $106.0350
110+ $1.3660 $150.2600
160+ $1.2705 $203.2800
205+ $1.2227 $250.6535
260+ $1.1750 $305.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 56,760 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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