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Same model may have multiple batches, images only for reference.
IXFA102N15T Real Image
Same model may have multiple batches, images only for reference.

IXFA102N15T

Part No IXFA102N15T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 102A TO263  /  N-Channel 150 V 102A (Tc) 455W (Tc) Surface Mount TO-263 (IXFA)
Datasheet
IXFA102N15T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Trench
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5220 pF @ 25 V
Power Dissipation (Max) 455W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (IXFA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IXFA102
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1182650-IXFA102N15T
Ultra Librarian 3D Model Ultra Librarian IXFA102N15T CAD Model

Description

The IXFA102N15T is an N-channel MOSFET transistor manufactured by IXYS.

  • Drain to Source Voltage (Maximum): 150V
  • Continuous Drain Current: 102A (Tc)
  • Power Dissipation (Maximum): 455W (Tc)
  • Gate Charge: 87 nC @ 10V
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Input Capacitance (Maximum): 5220 pF @ 25 Vds
  • Operating Temperature: -55°C to 175°C (TJ)

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