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Same model may have multiple batches, images only for reference.
IXFP34N65X2 Real Image
Same model may have multiple batches, images only for reference.

IXFP34N65X2

Part No IXFP34N65X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 34A TO220AB / N-Channel 650 V 34A (Tc) 540W (Tc) Through Hole TO-220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Ultra X2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3330 pF @ 25 V
Power Dissipation (Max) 540W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXFP34
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IXFP34N65X2X,IXFP34N65X2X-ND
Standard Package 50
Win Source Part Number 974329-IXFP34N65X2
Ultra Librarian 3D Model Ultra Librarian IXFP34N65X2 CAD Model

Description

The IXYS IXFP34N65X2 is an N-channel MOSFET transistor with a drain to source voltage of 650V and a continuous drain current of 34A @ 25°C.

  • Supply and Demand Status: Limited
  • Drain to Source Voltage: 650V
  • Continuous Drain Current: 34A @ 25°C
  • Maximum Power Dissipation: 540W
  • Gate Charge: 56 nC @ 10V

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49+ $3.1098 $152.3802
67+ $3.0095 $201.6365
86+ $2.9092 $250.1912
116+ $2.6082 $302.5512
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