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Same model may have multiple batches, images only for reference.
IXTA1N200P3HV Real Image
Same model may have multiple batches, images only for reference.

IXTA1N200P3HV

Part No IXTA1N200P3HV
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 2000V 1A TO263 / N-Channel 2000 V 1A (Tc) 125W (Tc) Surface Mount TO-263AA
Datasheet
IXTA1N200P3HV Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series Polar P3™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2000 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IXTA1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1031669-IXTA1N200P3HV
Ultra Librarian 3D Model Ultra Librarian IXTA1N200P3HV CAD Model

Description

The IXTA1N200P3HV is an N-channel MOSFET from the Polar P3™ series of discrete semiconductor products.

  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Power Dissipation: 125W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Drain to Source Voltage (Vdss): 2000 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • FET Type: N-channel
  • Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V

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