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IXTA3N120TRL

Part No IXTA3N120TRL
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 3A TO-263
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1200V
Continuous Drain Current at 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 4.5 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (IXTA)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1049735-IXTA3N120TRL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTA3N120TRL CAD Model

Description

The IXTA3N120TRL is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 1200V and a continuous drain current of 3A (Tc).

  • Drain-Source Breakdown Voltage: 1200V
  • Continuous Drain Current: 3A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 42nC @ 10V
  • Technology: MOSFET
  • Package/Case: TO-263 (IXTA)
  • Application: Discrete Semiconductor Products
  • Power Dissipation: 200W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.9586 $55.8344
9+ $11.4532 $103.0788
14+ $11.0953 $155.3342
19+ $10.7374 $204.0106
25+ $10.3795 $259.4875
33+ $9.3057 $307.0881
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Availability: 1,120 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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