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IXTA4N80P-TRL

Part No IXTA4N80P-TRL
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 3.6A TO263 / N-Channel 800 V 3.6A (Tc) 100W (Tc) Surface Mount TO-263 (D2Pak)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series Polar
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.4Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id 5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 14.2 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V
Power Dissipation (Max) 100W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IXTA4
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 238-IXTA4N80P-TRLTR
Standard Package 800
Win Source Part Number 1066198-IXTA4N80P-TRL
Ultra Librarian 3D Model Ultra Librarian IXTA4N80P-TRL CAD Model

Description

IXTA4N80P-TRL is a MOSFET (Metal Oxide) transistor manufactured by IXYS.

  • FET Type: N-channel
  • Drain to Source Voltage (Vdss): 800 V
  • Continuous Drain Current (Id): 3.6A (Tc) @ 25°C
  • Maximum Rds On: 3.4Ohm @ 1.8A and 10V
  • Gate Charge (Qg): 14.2 nC @ 10 V
  • Input Capacitance (Ciss): 750 pF @ 25 Vds
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Maximum Power Dissipation: 100W (Tc)
  • Series: Polar
  • Packaging: Tape and Reel
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2256 $66.7680
65+ $1.8262 $118.7030
100+ $1.7692 $176.9200
135+ $1.7121 $231.1335
175+ $1.6550 $289.6250
235+ $1.4839 $348.7165
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,280 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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