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IXTA6N50D2 Real Image IXTA6N50D2 Real Image
Same model may have multiple batches, images only for reference.
IXTA6N50D2 Real Image IXTA6N50D2 Real Image
IXTA6N50D2 Real Image IXTA6N50D2 Real Image
Same model may have multiple batches, images only for reference.

IXTA6N50D2

Part No IXTA6N50D2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description Depletion Mode MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Gate Charge (Qg) (Maximum) @ Vgs 96nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 2800pF @ 25V
Vgs (Maximum) ±20V
FET Feature Depletion Mode
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 500 mOhm @ 3A, 0V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package TO-263 (IXTA)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1191245-IXTA6N50D2
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXTA6N50D2
Introduction Date March 18, 2011
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian IXTA6N50D2 CAD Model

Description

The IXTA6N50D2 is a N-channel MOSFET transistor manufactured by IXYS.

  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Maximum Continuous Drain Current (Id) @ 25°C: 6A (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Gate Charge (Qg) (maximum) @ Vgs: 96nC @ 5V
  • Input Capacitance (Ciss) (maximum) @ Vds: 2800pF @ 25V
  • Commonly used in: Discrete semiconductor products
  • Popularity Rating: Medium
  • Supply and Demand Status: Limited
  • Alternative Parts: STB10NB50, STB10NB50T4, and PHB11N50E

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