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IXTQ26N60P

Part No IXTQ26N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 26A TO-3P
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 4150pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 460W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049927-IXTQ26N60P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTQ26N60P CAD Model

Description

The IXTQ26N60P is an N-channel MOSFET transistor with a drain-source breakdown voltage of 600V and a continuous drain current of 26A @ 25°C.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 26A @ 25°C
  • Package: TO-3P
  • Mounting: Through Hole
  • Power Dissipation: 460W (Tc)
  • Drive Voltage: 10V
  • Maximum On-State Resistance: 270 mOhm @ 500mA
  • Vgs(th): 5V @ 250μA
  • Maximum Gate Charge: 72nC @ 10V
  • Maximum Input Capacitance: 4150pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1391 $64.1730
70+ $1.7556 $122.8920
105+ $1.7013 $178.6365
145+ $1.6459 $238.6555
185+ $1.5916 $294.4460
245+ $1.4264 $349.4680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 65,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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