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Same model may have multiple batches, images only for reference.
IXTY4N65X2
Same model may have multiple batches, images only for reference.

IXTY4N65X2

Part No IXTY4N65X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 4A TO252 / N-Channel 650 V 4A (Tc) 80W (Tc) Surface Mount TO-252AA
Datasheet
IXTY4N65X2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Ultra X2
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 455 pF @ 25 V
FET Feature -
Power Dissipation (Max) 80W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IXTY4
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355063-IXTY4N65X2
Ultra Librarian 3D Model Ultra Librarian IXTY4N65X2 CAD Model

Description

The IXYS 1355063-IXTY4N65X2 is a N-Channel MOSFET transistor with a drain to source voltage (Vdss) of 650V and a continuous drain current (Id) of 4A from IXYS.

  • Drain to Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 4A
  • Maximum On-Resistance (Rds On): 850mOhm @ 2A and 10V
  • Gate Threshold Voltage (Vgs(th)): 5V @ 250μA
  • Gate Charge (Qg): 8.3nC @ 10V
  • Input Capacitance (Ciss): 455pF @ 25V
  • Maximum Power Dissipation: 80W
  • Package: TO-252-3, DPak
  • Mounting Type: Surface Mountable
  • Series: Ultra X2
  • Market Status: Active

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